2SA1315

      The 2SA1315(TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)) is used in power amplifier applications, power switching applications, and possesses high-speed switching time: t_stg = 1.0 s (typ.), low collector saturation voltage: V_{CE (sat)} = -0.5 V (max) (I_C = -1 A) , complementary to 2SC3328.
      Some parameters of the 2SA1315 are got at Ta(=25°C), V_CBO(Collector-base voltage)=-80V, V_CEO(Collector-emitter voltage)=-80V, V_EBO(Emitter-base voltage)=-5V, I_B(Continuous base current)=-1A, I_C(Continuous collector current)=-2A, P_C(Collector power dissipation)=900mW, T_stg(Storage temperature range)=-55 to 150°C, T_j(Junction temperature)=150°C. Some about the electrical properties of the 2SA1315 are also got at Ta(25°C), I_CBO(Collector cut-off current, V_CB =-80V, I_E = 0)=-0.1A(Max), I_EBO(Emitter cut-off current, V_EB = -5V, I_C = 0)=-0.1A, h_FE (1)(V_CE = -1 V, I_C = -10 mA, R: 70 to 140, O: 120 to 240)=70(min)/240(max), h_FE (2)(V_CE = -2 V, I_B = -1.5 A )=40(min), V_{CE (sat)} (Collector-emitter saturation voltage, I_C = -1A, I_B = -50 mA)=-0.9(Typ.)/-0.5(Max)V, V_BE(Base-emitter saturation voltage, I_C = -1 A, I_B = -0.05 A  )=-0.9V(Typ.)/-1.2(max)V, f_T(Transition frequency, V_CE = -2V, I_C = -0.5A)=80(Typ.)MHz, C_ob(Collector output capacitance, V_CB = -10 V, I_E = 0, f = 1 MHz)=45(Max)pF, t_on(Turn-on time)/t_stg(Storage time)/t_f(Fall time)=0.2/1.0/0.2s(Typ.).
      Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause 2SA1315 to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).