2SA1286

The 2SA1286 is a silicon PNP epitaxial type transistor. Designed with high collector current and high hFE. The feature of 2SA1286 are as follows: (1)high hFE hFE = 400 to 800; (2)high collector current(IC = -1.5A, ICM = -3A); (3)low collector to emitter saturation voltage. VCE = -0.25V typ(@IC = -1A, IB = -20mA); (4)high collector dissipation; (5)high collector dissipation Pc = 900mW.

The absolute maximum ratings of the 2SA1286 are: (1)collector to base voltage: -30V; (2)emitter to base voltage: -6V; (3)collector to emitter volatge: -20V; (4)collector current: -1.5A; (5)collector dissipation: 900mW; (6)junction temperature: +150; (7)storage temperature: -55 to +150.

The following is about the electrical characteristics of 2SA1286: (1)C to B break down voltage: -30V min at IC = -10A, IE = 0; (2)E to B break down voltage: -6V min at IE = -10A, IC = 0; (3)C to E break down voltage: -20V min at IC = -1mA, RBE = ; (4)collector cut off current: -0.1A max at VEB = -2V, IC = 0; (5)DC forward current gain: 400 min and 800 max at VCE = -6V, IC = -500mA; (6)C to E saturation voltage: -0.25V typical and -0.5V max at IC = -1A, IB = -20mA; (7)gain band width product: 90MHz typical at VCE = -10V, IE = 10mA; (8)collector output capacitance: 37pF typical at VCB = -10V, IE = 0, f = 1MHz.