2SA1285

The 2SA1285 is a silicon PNP epitaxial type transistor. designed with high voltage, high hFE, high fT, small cob and excellent hFE lineary. The feature of 2SA1285 are as follows: (1)high voltage VCEO = 120, 150V; (2)high fT = 200MHz, low Cob = 3.5pF typ; (3)high hFE = 150 to 800; (4)high collector dissipation Pc = 900mW.

The absolute maximum ratings of the 2SA1285 are: (1)collector to base voltage: -120V; (2)emitter to base voltage: -5V; (3)collector to emitter volatge: -120V; (4)collector current: -100mA; (5)collector dissipation: 900mW; (6)junction temperature: +150; (7)storage temperature: -55 to +150.

The following is about the electrical characteristics of 2SA1285: (1)C to B break down voltage: -120V min at IC = -10A, IE = 0; (2)E to B break down voltage: -50V min at IE = -10A, IC = 0; (3)C to E break down voltage: -120V min at IC = -1mA, RBE = ; (4)collector cut off current: -0.1A max at VEB = -4V, IC = 0; (5)DC forward current gain: 150 min and 800 max at VCE = -10V, IC = -10mA; (6)C to E saturation voltage: -0.17V typical and -0.6V max at IC = -50mA, IB = -2.5mA; (7)gain band width product: 200MHz typical at VCE = -10V, IE = 10mA; (8)collector output capacitance: 3.5pF typical at VCB = -10V, IE = 0, f = 1MHz.