2SA1265N

The 2SA1265N (Silicon PNP Power Transistors) is used in a power amplifier applications, and CRT display, video output, and which possesses Complement to type 2SC3182, with TO-3P(I) package and 2SA1265 with short pin.
Some parameters of the 2SA1265N are got at Ta(=25°C), VCBO(Collector-base voltage, open emitter)=-140V, BVCEO(Collector-emitter voltage, open base)=-140V, BVEBO(Emitter-base voltage, open collector)=-5V, IC(Collector Current(DC))=-10A, TJ, Tstg(Junction and Storage temperature )=150, -55 to 150°C, IB(Base current)=-1A, PT(Total power dissipation, TC=25)=100W. Some about the electrical properties of the 2SA1265N are also got at Tj(25°C unless otherwise noted), ICBO(Collector cut-off current, VCB =-140V, IE = 0)=-5A(Max.), IEBO(Emitter cut-off current, VEB = -5V, IC = 0)=-5A, h FE-1 (DC Current Gain, IC=-1A ; VCE=-5V,)=55(min)/160(max)(R:55-110, O: 80-160), h FE-2(DC Current Gain, IC=-5A ; VCE=5V,)=35(min), V CE (sat) (Collector-emitter saturation voltage, IC = -7A, IB = -0.7A)= -0.8(Typ)/-0.2(Max)V, VBE(Base-emitter saturation voltage, IC=-5A ; VCE=-5V)=-1.0(Typ)/-1.5(max)V, fT(Transition frequency, IC=-1A ; VCE=-5V)=30(Typ.)MHz, Cob(Output capacitance, IE=0 ; VCB=10V ;f=1MHz)=480(Typ)pF.
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