2SA1244

      The 2SA1244(TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)) is used in high current switching applications, and which possesses low collector saturation voltage( VCE(sat) =-0.4 V (max) (IC = -3 A)), high speed switching time(tstg = 1.0 s (typ.)), complementary to 2SC3074.
      Some parameters of the 2SA1244 are got at Ta(=25°C), VCBO(Collector-base voltage, )=-60V, VCEO(Collector-emitter voltage)=-50V, VEBO(Emitter-base voltage, open collector)=-5V, IC(Collector Current(DC))=-5A, IB(Base current)=-1A, TJ(Junction temperature)=150°C, Tstg(Junction and Storage temperature )=-55 to 150°C, PC(Collector power dissipation)(Ta = 25°C/Tc = 25°C)=1.0/20W.
      Some about the electrical properties of the 2SA1244 are also got at Ta(25°C unless otherwise noted), ICBO(Collector cut-off current, VCB =-50V, IE = 0)=-1A(Max.), IEBO(Emitter cut-off current, VEB = -5V, IC = 0)=-1A, h FE-1 (DC Current Gain, VCE = -1 V, IC = -1 A,)=70(min)/240(max)(h FE (1) classification O: 70 to 140, Y: 120 to 240), h FE-2(DC Current Gain, VCE =-1 V, IC =-3 A)=30(min), V CE (sat) (Collector-emitter saturation voltage, IC = -3 A, IB = -0.15 A)= -0.2(Typ)/-0.4(Max)V, V BE(sat) (Base-emitter saturation voltage, IC = -3 A, IB =-0.15)=-0.9(typ)/1.2(max), V AV(BR)CEO (Collector-emitter breakdown voltage, IC=-10mA ;IB=0)=-70(min)/240(max)V, V (BR)EBO (Emitter-base breakdown voltage  IE=-1mA; IC=0)=-7(min)V, fT(Transition frequency, VCE =-4 V, IC =-1 A)=60(typ)MHz, Cob(Collector output capacitance, VCB =-10 V, IE = 0, f = 1 MHz)=170(typ)pF, ton(Turn-on time)/tstg(Storage time)/tf(Fall time)(Switching time)=0.1/1.0/0.1(typ)s.
      Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause 2SA1244 to decrease in the reliability significantly even if the operating conditions (i.e.operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).