2SA1117

The 2SA1117 (Silicon PNP Power Transistors) is used for power switching amplifier and general purpose applications, which possesses high power dissipations with TO-3 package.
Some parameters of the 2SA1117 are got at Ta(=25°C), VCBO(Collector-basevoltage,Openemitter)=-200V, VCEO(Collector-emitter voltage, Open base)=-200V, VEBO(Emitter-base voltage, open collector)=-6V, IC(Collector Current(DC))=-17A, IB(Base current)=-5A, PC(Collector power dissipation, TC=25)200 W, TJ(Junction temperature)=150°C, Tstg(Junction and Storage temperature)=-65 to 150°C.
Some about the electrical properties of the 2SA1117 are also got at Ta(25°C unless otherwise noted), ICBO(Collector cut-off current, VCB =-200V, IE = 0)=-0.1mA(Max.), IEBO(Emitter cut-off current, VEB = -6V, IC = 0)=-0.1mA, hFE(DC Current Gain, VCE = -4V, IC =-8A)=20(min), V(BR)CEO(Collector-emitter breakdown voltage, IC=-50mA; IB=0)=-200 V(min), V(BR)EBO(Emitter-base breakdown voltage IE=-1mA; IC=0)=-6V(min), VCEsat(Collector-emitter saturation voltage IC=-5A; IB=-0.5A)=-2.0 V(max), fT(Transition frequency IC=-0.5A; VCE=-12V)=20 MHz(typ).
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