2SA1020G

Transistors Bipolar (BJT) 1W High Current PNP

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SeekIC No. : 00210782 Detail

2SA1020G: Transistors Bipolar (BJT) 1W High Current PNP

floor Price/Ceiling Price

Part Number:
2SA1020G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 50 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 2 A
DC Collector/Base Gain hfe Min : 70 at 500 mA at 2 V Configuration : Single
Maximum Operating Frequency : 100 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92
Packaging : Bulk    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 50 V
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum Operating Frequency : 100 MHz (Min)
Packaging : Bulk
Maximum DC Collector Current : 2 A
DC Collector/Base Gain hfe Min : 70 at 500 mA at 2 V


Features:

• Pb−Free Packages are Available*


Specifications

Rating Symbol Value Unit
Collector−Emitter Voltage VCE 50 Vdc
Collector−Base Voltage VCB 50 Vdc
Emitter −Base Voltage VEB 5.0 Vdc
Collector Current − Continuous IC 2.0 Adc
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD 900
5.0
mW
mW/°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 1.5
12
W
mW/°C
Operating and Storage Junction Temperature
Range
TJ, Tstg −55 to
+150



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