2SA1020-Y(TE6,F,M), US $ .08-.12 , Toshiba, 2SA1020-Y(TE6,F,M) DataSheet download, circuit diagram from SeekIC.com

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2SA1020-Y(TE6,F,M): Transistors Bipolar (BJT) PNP -50V -2A 900mW

2SA1020-Y(TE6,F,M) Data Sheet

US $ .08~.12 / Piece | Get Latest Price

Part Number:: 2SA1020-Y(TE6,F,M)
Mfg:: Toshiba
Supply Ability:: 5000

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Upload time: 2024/11/23

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Product Details

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Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	- 50 V
Emitter- Base Voltage VEBO :	- 5 V	Maximum DC Collector Current :	2 A
DC Collector/Base Gain hfe Min :	70	Configuration :	Single
Maximum Operating Frequency :	100 MHz (Typ)	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-92 MOD

Description

Packaging :
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : - 50 V
Emitter- Base Voltage VEBO : - 5 V
DC Collector/Base Gain hfe Min : 70
Mounting Style : Through Hole
Maximum DC Collector Current : 2 A
Maximum Operating Frequency : 100 MHz (Typ)
Package / Case : TO-92 MOD

Parameters:

Technical/Catalog Information	2SA1020-Y(TE6,F,M)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	2A
Power - Max	900mW
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 1A
Frequency - Transition	100MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Tape & Box (TB)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SA1020 Y TE6,F,M 2SA1020YTE6,F,M

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2SA1020-Y(TE6,F,M)

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