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2PD1820A

Features: • High current (max. 500 mA)• Low voltage (max. 50 V)• Low collector-emitter saturation voltage (max. 600 mV).Application• General purpose switching and amplification, especially for portable equipment.Specifications SYMBOL PARAMETER CONDITIONS MIN. M...

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2PD1820A: Features: • High current (max. 500 mA)• Low voltage (max. 50 V)• Low collector-emitter saturation voltage (max. 600 mV).Application• General purpose switching and amplificati...

2PD1820A Data Sheet

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Part Number:
2PD1820A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High current (max. 500 mA)
• Low voltage (max. 50 V)
• Low collector-emitter saturation voltage (max. 600 mV).


Application

• General purpose switching and amplification, especially for portable equipment.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 60 V
VCEO collector-emitter voltage open base − 50 V
VEBO emitter-base voltage open collector − 5 V
IC collector current (DC)   − 500 mA
ICM peak collector current   − 1 A
IBM peak base current     200 mA
Ptot total power dissipation Tamb 25 °C; note 1   200 mW
Tstg storage temperature   −65 +150 °C
Tj
junction temperature 		  − 150 °C
Tamb operating ambient temperature   −65 +150 °C



Description

NPN transistor in an SC-70; SOT323 plastic package.
PNP complement: 2PB1219A.


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