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2PB709AW

Features: • High collector current (max. 100 mA)• Low collector-emitter saturation voltage (max. 500 mV).Application• General purpose switching and amplification.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector-base cut-off current IE = ...

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2PB709AW: Features: • High collector current (max. 100 mA)• Low collector-emitter saturation voltage (max. 500 mV).Application• General purpose switching and amplification.Specifications ...

2PB709AW Data Sheet

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Part Number:
2PB709AW
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High collector current (max. 100 mA)
• Low collector-emitter saturation voltage (max. 500 mV).


Application

• General purpose switching and amplification.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector-base cut-off current IE = 0; VCB = −45 V − −10 nA
IE = 0; VCB = −45 V; Tj= 150 °C − −5 µA
IEBO emitter-base cut-off current IC = 0; VEB = −5V − −10 nA
hFE DC current gain IC = −2 mA; VCE = −10 V      
  2PB709AQW   160 260  
  2PB709ARW   210 340  
  2PB709ASW   290 460  
VCEsat collector-emitter saturation voltage IC = −100 mA; IB = −10 mA;
note 1		 − −500 mV
Cc collector capacitance IE =ie = 0; VCB = −10 V;
f = 1 MHz
 − 5 pF
fT transition frequency IC = −1 mA; VCE = −10 V;
f = 100 MHz 		     
  2PB709AQW 60 − MHz   60 − MHz
  2PB709ARW 70 − MHz   70 − MHz
  2PB709ASW 80 − MHz   80 − MHz
           



Description

PNP transistor in an SC-70 (SOT323) plastic package.
NPN complement: 2PD601AW


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