Features: Low collector-emitter saturation voltage VCEsatHigh collector current capability: IC and ICMHigh collector current gain (hFE) at high ICHigh efficiency due to less heat generationSmaller required Printed-Circuit Board (PCB) area than for conventional transistorsApplicationDC-to-DC ...
2PB1424: Features: Low collector-emitter saturation voltage VCEsatHigh collector current capability: IC and ICMHigh collector current gain (hFE) at high ICHigh efficiency due to less heat generationSma...
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The 2PB1424 features:
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/
TO-243) SMD plastic package.
NPN complement: 2PD2150.