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2N7610T2

Features: ·5V CMOS and TTL Compatible· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Light WeightSpecifications Parameter Max. Units ID @ VGS = 4.5V, TC=25°C Continuous Drain Current 3.3...

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SeekIC No. : 004219639 Detail

2N7610T2: Features: ·5V CMOS and TTL Compatible· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Light WeightSpe...

2N7610T2 Data Sheet

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Part Number:
2N7610T2
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·5V CMOS and TTL Compatible
· Fast Switching
· Single Event Effect (SEE) Hardened
· Low Total Gate Charge
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Light Weight


Specifications

Parameter Max. Units
ID @ VGS = 4.5V, TC=25°C Continuous Drain Current 3.3 A
ID @ VGS = 4.5V, TC=100°C Continuous Drain Current 2.1
IDM Pulsed Drain Current 13.2
PD @ TC = 25°C Max. Power Dissipation 22.7 W
Linear Derating Factor 0.18 W/
VGS Gate-to-Source Voltage ±10 V
EAS Single Pulse Avalanche Energy 29 mJ
IAR Avalanche Current 3.3 A
EAR Repetitive Avalanche Energy 2.3 mJ
dv/dt Peak Diode Recovery dv/dt 3.29 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to 150
Lead Temperature 300 (0.063in/1.6mm from case for 10s)
Weight 0.98 (Typical) g
For footnotes refer to the last page


Description

International Rectifier's R7TM Logic Level Power MOSFETs 2N7610T2 provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity.

2N7610T2 is used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers.




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