2N7274D

The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs 2N7274D of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm² for 500V product to 1E14n/cm² for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting. Heavy ion survival from signal event drain burn-out exists for linear energy transfer (LET) of 35 at 80% of rated voltage.

This MOSFET 2N7274D is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n^o) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

This part may be supplied as a die or in various packages other than shown above. Reliability screening is available as either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S19500. Contact the Harris Semiconductor High-Reliability Marketing group for any desired deviations from the data sheet.