2N6922

The 2N6922 is designed as one kind of NPN silicon transistors which offer an unprecedented combination of speed and ruggedness for use in high speed switching systems. This unique series also features general semiconductor industries' planar manufacturin process to provide surface stabilization for high voltage operation and to enhance long term reliability.

The absolute maximum ratings of the 2N6922 can be summarized as:(1)collector-emitter voltage, blocking:550 Volts;(2)collector-emitter voltage inductive switching:450 Volts;(3)collector-emitter voltage, sustaining:400 Volts;(4)emitter base voltage:8.0 Volts;(5)collector current continuous / peak:20 Amps;(6)emitter current continuous / peak:30 Amps;(7)base current continuous / peak:10 Amps;(8)total power dissipation @ Tc=25:220 Watts;(9)operating and storage junction temperature range:-65 to +200. If you want to know more information such as the electrical characteristics about the 2N6922, please download the datasheet in www.seekic.com or www.chinaicmart.com .