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2N6897

Features: • -12A, -100V• rDS(ON) = 0.3Ω• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedance• Majority Carrier DeviceSpecificationsDrian to Source Voltage . . . . . . . . . . . . . . . ...

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SeekIC No. : 004219576 Detail

2N6897: Features: • -12A, -100V• rDS(ON) = 0.3Ω• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedanc...

2N6897 Data Sheet

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Part Number:
2N6897
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

• -12A, -100V
• rDS(ON) = 0.3Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device


Specifications

Drian to Source Voltage  . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .  BVDSS
Drian to Gate Voltage (RGS = 1Ω). . . . . . . . . . . . . . . . . . . .. . . .VDGR
Continuous Drain Current
    RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . ID
    Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . .  IDM
Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation
    TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Above TC = 25oC, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . .  . . . 
Operating and Storage Junction Temperature Range  . . . .. .  TJ, TSTG
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . .  TL
(At distance 1/8 in. (3.17mm) from seating plane for 10s max)


Description

The 2N6897 is an P-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. 2N6897 can be operated directly from an integrated circuit.




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