On-State RMS Current (It RMS)
:
Maximum Gate Peak Inverse Voltage
:
Packaging
:
Mounting Style
: Stud
Breakover Current IBO Max
: 200 A
Gate Trigger Voltage (Vgt)
: 2 V
Holding Current (Ih Max)
: 100 mA
Rated Repetitive Off-State Voltage VDRM
: 200 V
Gate Trigger Current (Igt)
: 40 mA
Forward Voltage Drop
: 2 V
Package / Case
: TO-48
Off-State Leakage Current @ VDRM IDRM
: 12 mA
DescriptionThe 2N685 is a kind of silicon controlled rectifier designed for phase control applications.
The following is about the maximum ratings of 2N685 (TC=25, unless otherwise noted): (1)VDRM: 200 V; (2)VRRM: 200 V; (3)VRSM: 200 V; (4)RMS on-state current (TC=70), IT(TMS): 25 A; (5)peak one cycle surge current (60 Hz), ITSM: 200 A; (6)gate power dissipation, PGM: 5.0 W; (7)average gate power dissipation, PG(AV): 0.5 W; (8)storage temperature, Tstg: -65 to +150; (9)operating junction temperature, TJ: -65 to +125; (10)thermal resistance, junction to case, JC: 1.5/W.
Then is about the electrical characteristics of 2N685 (TC=25, unless otherwise noted): (1)IDRM, IRRM: 12 mA max when rated VDRM, VRRM, TC=125; (2)IGT: 40 mA max when VD=12 V, RL=50; (3)VGT: 2.0 V max when VD=12 V, RL=50; (4)VTM: 2.0 V max when ITM=50 A, PW=1.0 ms, D.C=20%; (5)IH: 100 mA max when VD=7.0 V, RGK=1K; (6)dv/dt: 100 V/s typ when rated VDRM, TC=125; (7)ton: 2.0s typ when IF=10 A, IG=200 mA; (8)toff: 15s typ when IF=10 A, IG=200 mA.
2N685 Data Sheet
