2N6790

                                                                                     2N6790                  UNITS
Drain to Source Voltage . . . . . . . . . . . . . . .  V_DS            200                          V
Drain to Gate Voltage (R_GS= 20k . . . . . . V_DGR             200                         V
Continuous Drain Current. . . .. . . . . . . . . . . . I_D             3.5                          A
T_C= 100oC. . . .  . . . . . . . . . . . . . . . . . .. . . . . I_D            2.25                         A
Pulsed Drain Current. . . . . . . .  . . . . . . . .. . I_DM              14                          A
Gate to Source Voltage. . . . . . . . .  . . . . .. . V_GS             ±20                         V
Continuous Source Current (Body Diode. . . . I_S              3.5                          A
Pulse Source Current (Body Diode). . . . . . .I_SM               14                           A
Maximum Power Dissipation. . . . . . . .  . . . . P_D               20                          W
Above T_C= 25, Derate Linearly. . . . . . . . . .              0.16 W/                     
Operating and Storage Temperature. .  T_J, T_STG           -55 to 150                
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s.  T_L             300                       
Package Body for 10s, See Techbrief 334.  .T_pkg             260                        

The 2N6790 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. 2N6790 can be operated directly from an integrated circuit.