2N6770

2N6770 is n-channel,enhancement mode,power MOSFETs designed especially for high voltage,high speed applications,such as off-line switching power supplies,UPS,AC and DC motor controls,relay and solenold drivers.

The 2N6770 has some maximum ratings.(1) The symbol is VDSS,the characteristic is drain to source voltage,the rating is 500,the unit is V.(2) The symbol is VDGR,the characteristic is drain to gate voltage RGS = 1.0 M,the rating is 500,the unit is V.(3) The symbol is VGS,the characteristic is gate to source voltage,the rating is ±20,the unit is V.(4) The symbol is TJ,Tstg,the characteristic is operating junction and storage temperatures,the rating is -55 to +150,the unit is .(5) The symbol is TL,the characteristic is maximum lead temperature for soldering purposes 1/16" from case for 10 s,the rating is 300,the unit is .

The 2N6770 has some maximum on-state characteristics.(1) The symbol is RDS(on),the characteristic is static drain-to-source on resistance,the rating is 0.4,the unit is .(2) The symbol is ID,the characteristic is drain current,continuous at Tc=25,the rating is 12,the unit is A.(3) The symbol is ID,the characteristic is drain current,continuous at Tc=100,the rating is 4.75,the unit is A.(4) The symbol is IDM,the characteristic of 2N6770 is drain current,pulsed,the rating is 25^2,the unit is A.