2N6761

The 2N6761 is a kind of N-channel, enhancement mode, power MOSFET. It is intended for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solend driver and high energy pulse circuits.

There are some features of 2N6761 as follows: (1)VGS rated at ±20 V; (2)silicon gate for fast switching speeds; (3)IDSS, RDS(on) specified at elevated temperature; (4)rugged.

Then is about the maximum ratings of 2N6761: (1)VDSS, drain to source voltage: 450 V; (2)VDGR, drain to gate voltage at RGS=1 M: 450 V; (3)VGS, gate to source voltage: ±20 V; (4)TJ, Tstg, operating and storage temperatures: -55 to +150; (5)TL, maximum lead temperature for soldering purposes, 1/16" from case for 10s: 300; (6)RDS(on), static drain-to-source on resistance: 2.0; (7)ID, drain current: 4.0 A when continuous at TC=25; 2.5 A when continuous at TC=100; (8)IDM: 602 A when pulsed; (9)RJC, thermal resistance, junction to case: 1.67/W; (10)PD, total power dissipation: 75 W at TC=25 and 30 W at TC=100.