Transistors Bipolar (BJT) POWER TRANSISTOR
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PARAMETER |
SYMBOL |
2N6728 |
2N6729 |
2N6730 |
UNIT |
Collector-Base Voltage |
VCBO |
-60 |
-80 |
-100 |
V |
Collector-Emitter Voltage |
VCEO |
-60 |
-80 |
-100 |
V |
Emitter-Base Voltage |
VEBO |
-5 |
V | ||
Peak Pulse Current |
ICM |
-2 |
A | ||
Continuous Collector Current |
IC |
-1 |
A | ||
Power Dissipation at Tamb = 25°C |
Ptot |
-1 |
W | ||
Operating and Storage Temperature Range |
Tj:Tstg |
-55 to +200 |
°C |