Transistors Bipolar (BJT) NPN Med Power
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 40 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 2 A |
DC Collector/Base Gain hfe Min : | 60 at 0.1 A at 1 V | Configuration : | Single |
Maximum Operating Frequency : | 500 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | TO-237 |
Packaging : | Box |
PARAMETER |
SYMBOL |
2N6714 |
2N6715 |
UNIT |
Collector-Base Voltage |
VCBO |
40 |
50 |
V |
Collector-Emitter Voltage |
VCEO |
30 |
40 |
V |
Emitter-Base Voltage |
VEBO |
5 |
V | |
Peak Pulse Current |
ICM |
2 |
A | |
Continuous Collector Current |
IC |
1 |
A | |
Power Dissipation at Tamb = 25°C |
Ptot |
1 |
W | |
Operating and Storage Temperature Range |
Tj:Tstg |
-55 to +200 |
°C |