2N6667G, US $ .3-.57 , ON Semiconductor, 2N6667G DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00216933 Detail

2N6667G: Transistors Darlington 10A 60V Bipolar Power PNP

2N6667G Data Sheet

US $ .3~.57 / Piece | Get Latest Price

Part Number:: 2N6667G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/23

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Product Details

Quick Details

Configuration :	Single	Transistor Polarity :	PNP
Collector- Emitter Voltage VCEO Max :	60 V	Emitter- Base Voltage VEBO :	5 V
Collector- Base Voltage VCBO :	60 V	Maximum DC Collector Current :	10 A
Maximum Collector Cut-off Current :	1000 uA	Power Dissipation :	65 W
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-220AB	Packaging :	Tube

Description

Transistor Polarity : PNP
Mounting Style : Through Hole
Packaging : Tube
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 60 V
Collector- Base Voltage VCBO : 60 V
Package / Case : TO-220AB
Power Dissipation : 65 W
Maximum Collector Cut-off Current : 1000 uA
Maximum DC Collector Current : 10 A

Parameters:

Technical/Catalog Information	2N6667G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP - Darlington
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	10A
Power - Max	65W
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 5A, 3V
Vce Saturation (Max) @ Ib, Ic	2V @ 10mA, 5A
Frequency - Transition	-
Current - Collector Cutoff (Max)	1mA
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N6667G 2N6667G 2N6667GOS ND 2N6667GOSND 2N6667GOS

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2N6667G

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