2N6660

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 3 Ohms
Continuous Drain Current : 0.41 A
Packaging : Bag
Package / Case : TO-39


Features:

Low On-Resistance: 1.3
Low Threshold: 1.7 V
Low Input Capacitance: 35 pF
Fast Switching Speed: 8 ns
Low Input and Output Leakage




Application

Direct Logic-Level Interface: TTL/CMOS
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays




Pinout






Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)
Parameter		Symbol	2N6660	Single		Total Quad	Unit
				VQ1004J	VQ1004P	VQ1004J/P
Drain-Source Voltage		VDS	60	60	60		V
Gate-Source Voltage-Non-Repetitive		VGSM	±30	±30	±30
Gate-Source Voltage-Continuous		VGS	±20	±20	±20
Continuous Drain Currentd (TJ = 175)	TC = 25	ID	0.46	0.46	0.46		A
	TC= 125		0.26	0.26	0.26
Pulsed Drain Current		IDM	2	2	2
Power Dissipation	TC= 25	PD	1.3	1.3	1.3	2	W
	TC = 25		0.52	0.52	0.52	0.8
Thermal Resistance, Junction-to-Ambient		RthJA	96	96	96	62.5	/W
Thermal Resistance, Junction-to-Case		RthJA	20
Operating Junction and Storage Temperature Range		TJ, Tstg	-55 to 155

Description

The 2N6660 is designed as one kind of enhancement-mode (normally-off) transistor that can be used in (1)motor controls; (2)converters; (3)amplifiers; (4)switches; (5)power supply circuits; (6)drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.). Features of the 2N6660 are:(1)free from secondary breakdown; (2)low power drive requirement; (3)ease of paralleling; (4)low CISS and fast switching speeds; (5)excellent thermal stability; (6)integral source-drain diode; (7)high input impedance and high gain; (8)complementary N- and P-channel devices.

The absolute maximum ratings of the 2N6660 can be summarized as:(1)Drain-to-Source Voltage: BVDSS;(2)Drain-to-Gate Voltage: BVDGS;(3)Gate-to-Source Voltage: ±20 V;(4)Operating and Storage Temperature: -55°C to +150°C;(5)Soldering Temperature: 300°C.

The electrical characteristics of 2N6660 can be summarized as:(1)Gate Threshold Voltage: 0.8 to 2.0 V;(2)Change in VGS(th) with Temperature: -3.8 to -5.5 mV/°C;(3)Gate Body Leakage: 100 nA;(4)ON-State Drain Current: 1.5 A;(5)Forward Transconductance: 170 m;(6)Input Capacitance: 50 pF;(7)Common Source Output Capacitance: 40 pF;(8)Reverse Transfer Capacitance: 10 pF;(9)Turn-ON Time: 10 ns;(10)Turn-OFF Time: 10 ns. If you want to know more information such as the electrical characteristics about it, please download the datasheet in www.seekic.com or www.chinaicmart.com.