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2N6659

MOSFET 35V 1.8 OHM

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SeekIC No. : 00165744 Detail

2N6659: MOSFET 35V 1.8 OHM

2N6659 Data Sheet

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Part Number:
2N6659
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 35 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 1.8 Ohms Mounting Style : Through Hole
Package / Case : TO-39 Packaging : Bulk    

Description

Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Gate-Source Breakdown Voltage : +/- 30 V
Packaging : Bulk
Resistance Drain-Source RDS (on) : 1.8 Ohms
Continuous Drain Current : 2 A
Drain-Source Breakdown Voltage : 35 V
Package / Case : TO-39


Features:

• Switching Regulators
• Converters
• Motor Drivers


Specifications

VDS
VGS
ID
ID
IDM
PD
PD
Tj
Tstg
TL		 Drain Source Voltage
Gate Source Voltage
Drain Current @ TCASE = 25°C
Drain Current @ TCASE = 100°C
Pulsed Drain Current *
Power Dissipation @ TCASE = 25°C
Power Dissipation @ TCASE = 100°C
Operating Junction Temperature Range
Storage Temperature Range
Lead Temperature (1/16" from case for 10 sec.)
35V
±20V
1.4A
1A
3A
6.25W
2.5W
55 to 150°C
55 to 150°C
300°C



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