2N6426

Maximum DC Collector Current :
Maximum Operating Temperature :
Transistor Polarity : NPN
Mounting Style : Through Hole
Configuration : Single
Collector- Base Voltage VCBO : 40 V
Power Dissipation : 625 mW
Package / Case : TO-92
Emitter- Base Voltage VEBO : 12 V
Maximum Collector Cut-off Current : 0.05 uA
Collector- Emitter Voltage VCEO Max : 40 V
Packaging : Box


Features:

• These are Pb−Free Devices*


Specifications

Rating	Symbol	Value	Unit
Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous	VCEO VCBO VEBO IC	40 40 12 500	Vdc Vdc Vdc mAdc
Total Device Dissipation @ TA = 25 Derate above 25	PD	625 5.0	mW mW/
Total Device Dissipation @ TA = 25 Derate above 25	PD	1.5 12	W mW/
Operating and Storage Junction Temperature Range	TJ, Tstg	−55 to +150

Parameters:

Technical/Catalog Information	2N6426
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	40V
Current - Collector (Ic) (Max)	500mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	20,000 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	1.2V @ 500A, 50mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	1A
Mounting Type	Through Hole
Package / Case	TO-92-3, TO-226AA (Straight Leads)
Packaging	Bulk
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N6426 2N6426 2N6426OS ND 2N6426OSND 2N6426OS