2N6394

On-State RMS Current (It RMS) :
Maximum Gate Peak Inverse Voltage :
Mounting Style : Through Hole
Packaging : Bulk
Off-State Leakage Current @ VDRM IDRM : 0.01 mA
Gate Trigger Voltage (Vgt) : 1.5 V
Breakover Current IBO Max : 100 A
Package / Case : TO-220AB
Rated Repetitive Off-State Voltage VDRM : 50 V
Gate Trigger Current (Igt) : 30 mA
Holding Current (Ih Max) : 50 mA
Forward Voltage Drop : 2.2 V at 24 A


Features:

• Glass Passivated Junctions with Center Gate Geometry for Greater Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability
• Blocking Voltage to 800 Volts
• Device Marking: Logo, Device Type, e.g., 2N6394, Date Code


Pinout




Specifications

Rating	Symbol	Value	Unit
Peak Repetitive OffState Voltage (Note 1.) (TJ = 40 to 1250C, Sine Wave,   50 to 60 Hz, Gate Open)                                               2N6394                                               2N6395                                               2N6397                                               2N6399	VDRM VRRM	50 100 400 800	Volts
On-State RMS Current (180° Conduction Angles; TC = 90°C)	IT(RMS)	12	A
Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ  = 90°C)	ITSM	100	A
Circuit Fusing (t = 8.3 ms)	2It	40	2As
Forward Peak Gate Power (Pulse Width 1.0 s, TC = 90°C)	PGM	20	Watts
Forward Average Gate Power (t = 8.3 ms, TC = 90°C)	PG(AV)	0.5	Watts
Forward Peak Gate Current (Pulse Width 1.0 s, TC = 90°C)	IGM	2.0	A
Operating Junction Temperature Range	TJ	40 to+125	°C
Storage Temperature Range	Tstg	40 to+150	°C