Transistors Darlington NPN Power Darlington
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Configuration : | Single | Transistor Polarity : | NPN | ||
Collector- Emitter Voltage VCEO Max : | 80 V | Emitter- Base Voltage VEBO : | 5 V | ||
Collector- Base Voltage VCBO : | 80 V | Maximum DC Collector Current : | 10 A | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Symbol | Parameter |
Value |
Unit |
VCBO |
Collector-Base Voltage (IB = 0) |
80 |
V |
VCEV | Collector-Emitter Voltage (VBE = -1.5V) |
80 |
V |
VCER | Collector-Emitter Voltage (RBE100) |
80 |
V |
VCEO | Collector-Emitter Voltage (IB = 0) |
80 |
V |
VEBO | Emitter-Base Voltage (IC = 0) |
5 |
V |
IC | Collector Current |
10 |
A |
ICM | Collector Peak Current |
15 |
A |
IB | Base Current |
0.25 |
A |
Ptot | Total Dissipation at Tc 25 |
65 |
W |
Tstg | Storage Temperature |
-65 to 150 |
|
Tj | Max. Operating Junction Temperature |
150 |
The 2N6388 is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package.
It is inteded for use in low and medium frequency power applications.
Technical/Catalog Information | 2N6388 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Transistor Type | NPN - Darlington |
Voltage - Collector Emitter Breakdown (Max) | 80V |
Current - Collector (Ic) (Max) | 10A |
Power - Max | 65W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 3V |
Vce Saturation (Max) @ Ib, Ic | 3V @ 100mA, 10A |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | 1mA |
Mounting Type | Through Hole |
Package / Case | TO-220-3 (Straight Leads) |
Packaging | Tube |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | 2N6388 2N6388 497 2562 5 ND 49725625ND 497-2562-5 |