2N6386

Transistors Bipolar (BJT) NPN Pwr Darlington

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2N6386 Picture
SeekIC No. : 00209747 Detail

2N6386: Transistors Bipolar (BJT) NPN Pwr Darlington

floor Price/Ceiling Price

US $ .53~.59 / Piece | Get Latest Price
Part Number:
2N6386
Mfg:
Central Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~800
  • 800~1200
  • 1200~2000
  • 2000~5200
  • Unit Price
  • $.59
  • $.56
  • $.55
  • $.53
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Month Sales

268 Transactions

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 40 V
Maximum DC Collector Current : 8 A DC Collector/Base Gain hfe Min : 100
Maximum Operating Frequency : 20 MHz Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Box    

Description

Emitter- Base Voltage VEBO :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : NPN
DC Collector/Base Gain hfe Min : 100
Mounting Style : Through Hole
Maximum DC Collector Current : 8 A
Collector- Emitter Voltage VCEO Max : 40 V
Packaging : Box
Package / Case : TO-220
Maximum Operating Frequency : 20 MHz


Application

·Designed for general-purpose amplifier
and low speed switching applications





Specifications

SYMBOL PARAMETER CONDITIONS Value UNIT
VCBO Collector-base voltage 2N6386 Open emitter 40 V
2N6387 60
2N6388 80
VCEO Collector-emitter voltage 2N6386 Open base 40 V
2N6387 60
2N6388 80
VEBO Emitter-base voltage Open collector 5 V
IC Collector Current 2N6386 8 A
2N6387
2N6388
10
ICM Collector current-Pulse 15
IB Base current-DC 0.25 A
PC Collector dissipation Tc=25 65 W
Tj Junction temperature 150
TSTG Storage temperature -65 to +150





Description

·2N6386 With TO-220C package
·Complement to type 2N6666/6667/6668
·DARLINGTON
·High DC current gain
·Low collector saturation voltage




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