2N6358

The 2N6358(Silicon NPN Power Transistors) can be used for general-purpose amplifier and low-frequency switching applications, which is with TO-3 package , high DC current gain and DARLINGTON.
Some parameters of 2N6358 are got at Ta=25 . V_CBO (Collector-base voltage, Open emitter )=80V, V_CEO (Collector-emitter voltage, Open base)=60V, V_EBO(Emitter-base voltage, Open collector)=5V, I_C (Collector current)=20A, I_B(Base current)=0.5A, P_D(Total power dissipation, T_C=25)=150W , T_j (Junction temperature)=200, T_stg (Storage temperature)=-65 to 200, R _{th j-c} (Thermal resistance junction to case)=1.09/W.
The traits of 2N6358 at T_j=25 unless otherwise specified are also known. V_(BR)CEO (Collector-emitter breakdwon voltage I_C=0.2A ;I_B=0)=60V(min), V _CEsat-1 (Collector-emitter saturation voltage, I_C=10A ;I_B=40mA)=2.0 V(max), V _CEsat-2(Collector-emitter saturation voltage, I_C=20A; I_B=1A)=4.0 V(max), V _BEsat(Base-emitter saturation voltageI_C=20A; I_B=1A)=4.0 V(max), V_BE(Base-emitter on voltage I_C=10A ; V_CE=4V)=2.8 V(max), I_CEO(Collector cut-off current, V_CE=60V; I_B=0)=0.1mA(max), I_EBO(Emitter cut-off current, V_EB=5V; I_C=0)=0.5 mA(max), h _FE-1(DC current gain, I_C=4A ; V_CE=5V)=1500(min)/10000(max), h _FE-2(DC current gain, I_C=20A ; V_CE=5V)=100(min).
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