2N6341G

Transistors Bipolar (BJT) 25A 150V 200W NPN

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2N6341G: Transistors Bipolar (BJT) 25A 150V 200W NPN

floor Price/Ceiling Price

US $ 5.06~7.48 / Piece | Get Latest Price
Part Number:
2N6341G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $7.48
  • $6.34
  • $6.05
  • $5.06
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 150 V
Emitter- Base Voltage VEBO : 6 V Maximum DC Collector Current : 25 A
DC Collector/Base Gain hfe Min : 50 Configuration : Single
Maximum Operating Frequency : 40 MHz (Min) Maximum Operating Temperature : + 200 C
Mounting Style : Through Hole Package / Case : TO-204
Packaging : Tray    

Description

Transistor Polarity : NPN
Configuration : Single
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 200 C
Package / Case : TO-204
Packaging : Tray
DC Collector/Base Gain hfe Min : 50
Maximum DC Collector Current : 25 A
Maximum Operating Frequency : 40 MHz (Min)
Collector- Emitter Voltage VCEO Max : 150 V


Parameters:

Technical/Catalog Information2N6341G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)150V
Current - Collector (Ic) (Max)25A
Power - Max200W
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 10A, 2V
Vce Saturation (Max) @ Ib, Ic1V @ 1A, 10A
Frequency - Transition40MHz
Current - Collector Cutoff (Max)50A
Mounting TypeChassis Mount
Package / CaseTO-204, TO-3
PackagingTray
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2N6341G
2N6341G



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