2N6338

Transistor Polarity : NPN
Configuration : Single
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 100 V
Maximum Operating Temperature : + 200 C
Package / Case : TO-204
Packaging : Tray
DC Collector/Base Gain hfe Min : 50
Maximum DC Collector Current : 25 A
Maximum Operating Frequency : 40 MHz (Min)


Specifications

Rating	Symbol	2N6338	2N6339	2N6340	2N6341	Unit
CollectorEmitter Voltage	VCEO	100	120	140	150	Vdc
CollectorBase Voltage	VCB	120	140	160	180	Vdc
EmitterBase Voltage	VEB	6.0	6.0	6.0	6.0	Vdc
Collector Current - Continuous Peak	IC	25 50	25 50	25 50	25 50	Adc
Base Current	IB	10	10	10	10	Adc
Total Device Dissipation @ TC = 25 Derate above 25	PD	200 1.14	200 1.14	200 1.14	200 1.14	Watts W/
Operating and Storage Junction Temperature Range	TJ, Tstg	65 to +200	65 to +200	65 to +150	65 to +200

Parameters:

Technical/Catalog Information	2N6338
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	25A
Power - Max	200W
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 10A, 2V
Vce Saturation (Max) @ Ib, Ic	1V @ 1A, 10A
Frequency - Transition	40MHz
Current - Collector Cutoff (Max)	50A
Mounting Type	Chassis Mount
Package / Case	TO-204, TO-3
Packaging	Tray
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N6338 2N6338