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2N6303

Features: · Collector-Emitter Sustaining Voltage: VCEO(sus) = - 80 Vdc (Min)· DC Current Gain: hFE = 30-150 @ IC = 1.5 Adc· Low Collector-Emitter Saturation Voltage: VCE(sat) = - 0.75 Vdc @ IC = 1.5 Adc· High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ)Application· High-Speed Switching· Med...

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SeekIC No. : 004219415 Detail

2N6303: Features: · Collector-Emitter Sustaining Voltage: VCEO(sus) = - 80 Vdc (Min)· DC Current Gain: hFE = 30-150 @ IC = 1.5 Adc· Low Collector-Emitter Saturation Voltage: VCE(sat) = - 0.75 Vdc @ IC = 1.5...

2N6303 Data Sheet

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Part Number:
2N6303
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Collector-Emitter Sustaining Voltage: VCEO(sus) = - 80 Vdc (Min)
· DC Current Gain: hFE = 30-150 @ IC = 1.5 Adc
· Low Collector-Emitter Saturation Voltage:
    VCE(sat) = - 0.75 Vdc @ IC = 1.5 Adc
· High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ)


Application

· High-Speed Switching
· Medium-Current Switching
· High-Frequency Amplifiers


Specifications

SYMBOL CHARACTERISTIC VALUE UNITS
VCEO*
VCB*
VEB*		 Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage		 -80
-80
-4.0		 Vdc
Vdc
Vdc
IC*
IC*
IB*		 Peak Collector Current
Continuous Collector Current
Base Current
 10
3.0
0.5		 Adc
Adc
Adc
TSTG*
TJ*		 Storage Temperatur
Operating Junction Temperature		 -65 to 200
-65 to 200
PD* Total Device Dissipation
TC = 25°C
Derate above 25°C		 6.0
34.3		 Watts
mW/°C
PD*


JC
 Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance
Junction to Case
Junction to Ambient		 1.0

5.71

29
175		 Watts

mW/°C

°C/W
°C/W



Description

These power transistors 2N6303 are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, aturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications.

Ultrasonically bonded leads and controlled die mount techniques areutilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200°C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life.




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