Features: · Collector-Emitter Sustaining Voltage: VCEO(sus) = - 80 Vdc (Min)· DC Current Gain: hFE = 30-150 @ IC = 1.5 Adc· Low Collector-Emitter Saturation Voltage: VCE(sat) = - 0.75 Vdc @ IC = 1.5 Adc· High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ)Application· High-Speed Switching· Med...
2N6303: Features: · Collector-Emitter Sustaining Voltage: VCEO(sus) = - 80 Vdc (Min)· DC Current Gain: hFE = 30-150 @ IC = 1.5 Adc· Low Collector-Emitter Saturation Voltage: VCE(sat) = - 0.75 Vdc @ IC = 1.5...
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SYMBOL | CHARACTERISTIC | VALUE | UNITS |
VCEO* VCB* VEB* |
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage |
-80 -80 -4.0 |
Vdc Vdc Vdc |
IC* IC* IB* |
Peak Collector Current Continuous Collector Current Base Current |
10 3.0 0.5 |
Adc Adc Adc |
TSTG* TJ* |
Storage Temperatur Operating Junction Temperature |
-65 to 200 -65 to 200 |
|
PD* | Total Device Dissipation TC = 25°C Derate above 25°C |
6.0 34.3 |
Watts mW/°C |
PD* JC |
Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance Junction to Case Junction to Ambient |
1.0 5.71 29 175 |
Watts mW/°C °C/W °C/W |
These power transistors 2N6303 are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, aturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications.
Ultrasonically bonded leads and controlled die mount techniques areutilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200°C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life.