Features: SpecificationsDescription 2N6116 is designed to enable the engineer to program unijunction characteristics such as RBB,,IV and IP by merely selecting two resistor values.It is widely used in the thyristor-trigger,oscillator,pulse and timing circuits.The device may also be used in speci...
2N6116: Features: SpecificationsDescription 2N6116 is designed to enable the engineer to program unijunction characteristics such as RBB,,IV and IP by merely selecting two resistor values.It is widely use...
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2N6116 is designed to enable the engineer to "program" unijunction characteristics such as RBB,,IV and IP by merely selecting two resistor values.It is widely used in the thyristor-trigger,oscillator,pulse and timing circuits.The device may also be used in special thyristor application due to the availability of an anode gate.Here you can get some information about the features.First, it is programmable-RBB,,IV and IP.The second one is the hermetic TO-18 package.Then is low on-state voltage which is 1.5 V maximum @ IF=50 mA.Next is low gate to anode leakage current which is 5 nA maximum.The fifth one is the high peak output voltage which is 16 V typical.The last one is the low offset voltage which is 0.35 V typical (RG=10 k ohms).
What comes next is about the absolute maximum ratings 2N6116.The ITRM (repetitive peak forward current) is 1 A at 100s pulse width,1% duty cycle and 2 A at 20s pulse width,1% duty cycle.The ITSM (non-repetitive peak forward current) is 5 A at 10s pulse width.The IG (DC gate current) is ±20 mA.The VGKF (gate to cathode forward voltage) is 40 V.The VGKR (gate to cathode reverse voltage) is 5 V.The VGAR (gate to anode forward voltage) is 40 V.The VAK (anode to cathode voltage) is ±40 V. The PF (forward power dissipation) is 250 mW at TA=25. The TJ (operating junction temperature) is from -55 to +125.The Tstg (storage temperature) is from -65 to +200.
The following is about the 2N6116 eletrical characteristics(TC=25).The typical IGAO (gate to anode leakage current) is 1 nA and the maximum is 5 nA at VS=40 Vdc,TA=25,cathode open;The typical IGAO is 30 nA and the maximum is 75 nA at VS=40 Vdc,TA=75,cathode open.The typical IGKS (gate to cathode leakage current) is 5 nA and the maximum is 50 nA at VS=40 Vdc,anode to cathode shorted.