2N6116

      2N6116 is designed to enable the engineer to "program" unijunction characteristics such as R_BB,,I_V and I_P by merely selecting two resistor values.It is widely used in the thyristor-trigger,oscillator,pulse and timing circuits.The device may also be used in special thyristor application due to the availability of an anode gate.Here you can get some information about the features.First, it is programmable-R_BB,,I_V and I_P.The second one is the hermetic TO-18 package.Then is low on-state voltage which is 1.5 V maximum @ I_F=50 mA.Next is low gate to anode leakage current which is 5 nA maximum.The fifth one is the high peak output voltage which is 16 V typical.The last one is the low offset voltage which is 0.35 V typical (R_G=10 k ohms).
      What comes next is about the absolute maximum ratings 2N6116.The I_TRM (repetitive peak forward current) is 1 A at 100s pulse width,1% duty cycle and 2 A at 20s pulse width,1% duty cycle.The I_TSM (non-repetitive peak forward current) is 5 A at 10s pulse width.The I_G (DC gate current) is ±20 mA.The V_GKF (gate to cathode forward voltage) is 40 V.The V_GKR (gate to cathode reverse voltage) is 5 V.The V_GAR (gate to anode forward voltage) is 40 V.The V_AK (anode to cathode  voltage) is ±40 V. The P_F (forward power dissipation) is 250 mW at T_A=25. The T_J (operating junction temperature) is from -55 to +125.The T_stg (storage temperature) is from -65 to +200.
      The following is about the 2N6116 eletrical characteristics(T_C=25).The typical I_GAO (gate to anode leakage current) is 1 nA and the maximum is 5 nA at V_S=40 Vdc,T_A=25,cathode open;The typical I_GAO is 30 nA and the maximum is 75 nA at V_S=40 Vdc,T_A=75,cathode open.The typical I_GKS (gate to cathode leakage current) is 5 nA and the maximum is 50 nA at V_S=40 Vdc,anode to cathode shorted.