2N6109

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 50 V
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Packaging : Box
DC Collector/Base Gain hfe Min : 30
Package / Case : TO-220
Maximum Operating Frequency : 10 MHz
Maximum DC Collector Current : 7 A


Specifications

Rating	Symbol	2N6111 2N6288	2N6109	2N6107 2N6292	Unit
CollectorEmitter Voltage	VCEO	30	50	70	Vdc
CollectorBase Voltage	VCB	40	60	80	Vdc
EmitterBase Voltage	VEB	5.0	5.0	5.0	Vdc
Collector Current - Continuous Peak	IC	7.0 10	7.0 10	7.0 10	Adc
Base Current	IB	3.0	3.0	3.0	Adc
Total Device Dissipation @ TC = 25 Derate above 25	PD	40 0.32	40 0.32	40 0.32	Watts W/
Operating and Storage Junction Temperature Range	TJ, Tstg	65 to +200	65 to +200	65 to +150

Parameters:

Technical/Catalog Information	2N6109
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	7A
Power - Max	40W
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 2.5A, 4V
Vce Saturation (Max) @ Ib, Ic	3V @ 3A, 7A
Frequency - Transition	4MHz
Current - Collector Cutoff (Max)	1mA
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N6109 2N6109 2N6109OS ND 2N6109OSND 2N6109OS