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2N60L

Features: * RDS(ON) = 5@VGS = 10V* Ultra Low gate charge (typical 9.0nC)* Low reverse transfer capacitance (CRSS = typical 5.0 pF)* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggednessSpecifications PARAMETER SYMBOL RATINGS UNIT Drain-Source ...

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SeekIC No. : 004219348 Detail

2N60L: Features: * RDS(ON) = 5@VGS = 10V* Ultra Low gate charge (typical 9.0nC)* Low reverse transfer capacitance (CRSS = typical 5.0 pF)* Fast switching capability* Avalanche energy specified* Improved dv...

2N60L Data Sheet

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Part Number:
2N60L
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

* RDS(ON) = 5@VGS = 10V
* Ultra Low gate charge (typical 9.0nC)
* Low reverse transfer capacitance (CRSS = typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness


Specifications

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage 2N60L-A
2N60L-B		 VDSS 600
650		 V
V
Gate-Source Voltage
Avalanche Current (Note 1)		 VGSS
IAR		 ±30
2.0		 V
A
Drain Current Continuous TC = 25
TC = 100		 ID 2.0
1.26		 A
A
Drain Current Pulsed (Note 1) IDP 8.0 A
Avalanche Energy Single Pulsed (Note 2)
Repetitive (Note 1)		 EAS
EAR		 140
4.5		 mJ
mJ
Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns
Total Power Dissipation TO-220
TO-220F
TO-251
TO-252		 PD 32
9
25
20		 W
W
W
W
Junction Temperature
Operating Temperature
Storage Temperature		 TJ
TOPR
TSTG		 +150
-55 ~ +150
-55 ~ +150


Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.




Description

The UTC 2N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.




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