Specifications IC 10 A VCE 35 V PDISS 83.3 W @ TC = 75°C TJ -65°C to +200°C TSTG -65°C to +200°C JC 1.50°C/WDescriptionThe 2N6093 is a High Gain Linear RF Power Amplifier Used in Class A or Class B Applications With Individual Ballast Emitter Resis...
2N6093: Specifications IC 10 A VCE 35 V PDISS 83.3 W @ TC = 75°C TJ -65°C to +200°C TSTG -65°C to +200°C JC 1.50°C/WDescriptionThe 2N6093 is a High Gain Lin...
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IC |
10 A |
VCE |
35 V |
PDISS |
83.3 W @ TC = 75°C |
TJ |
-65°C to +200°C |
TSTG |
-65°C to +200°C |
JC |
1.50°C/W |
The 2N6093 is a High Gain Linear RF Power Amplifier Used in Class A or Class B Applications With Individual Ballast Emitter Resistor and Built in Temperature Sensing Diode.