2N6076

Maximum Operating Frequency :
DC Collector/Base Gain hfe Min : 100
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum DC Collector Current : 0.5 A
Collector- Emitter Voltage VCEO Max : 25 V
Packaging : Bulk


Specifications

Storage Temperature ..................-55 Degrees C to 150 Degrees C
Operating Junction Temperature..............................150 Degrees C


Parameters:

Technical/Catalog Information	2N6076
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	25V
Current - Collector (Ic) (Max)	500mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 1mA, 10mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	100nA
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N6076 2N6076