2N6073B

On-State RMS Current (It RMS) :
Mounting Style : Through Hole
Holding Current (Ih Max) : 15 mA
Gate Trigger Current (Igt) : 5 mA
Rated Repetitive Off-State Voltage VDRM : 400 V
Off-State Leakage Current @ VDRM IDRM : 0.01 mA
Gate Trigger Voltage (Vgt) : 2.5 V
Packaging : Box
Breakover Current IBO Max : 30 A
Package / Case : TO-225


Specifications

	SYMBOL	2N6071 2N6071A 2N6071B	2N6075 2N6075A 2N6075B	2N6073 2N6073A 2N6073B	UNITS
Peak Repetitive Off-State Voltage	VDRM, VRRM	200	400	600	v
RMS On-State Current (TC=85)	IT(RMS)		4.0		A
Peak One Cycle Surge (60Hz, TJ=110)	ITSM		30		A
I2t Value for Fusing (t=8.3ms)	I2t		3.7		A2s
Peak Gate Power (TC=85)	PGM		10		W
Average Gate Power (t=8.3ms, TC=85)	PG(AV)		0.5		W
Peak Gate Voltage (TC=85)	VGM		5.0		V
Storage Temperature	Tstg		-40 to +150
Junction Temperature	TJ		-40 to +110
Thermal Resistance	JC		3.5		/W
Thermal Resistance	JA		75		/W
Maximum Lead Temperature	TL		260

Description

The CENTRAL SEMICONDUCTOR 2N6073B series types are silicon sensitive gate triacs designed for such applications as light dimmers, motor controls, heating controls and power  supplies.