2N6071A

On-State RMS Current (It RMS) :
Mounting Style : Through Hole
Gate Trigger Current (Igt) : 10 mA
Holding Current (Ih Max) : 15 mA
Off-State Leakage Current @ VDRM IDRM : 0.01 mA
Gate Trigger Voltage (Vgt) : 2.5 V
Packaging : Box
Breakover Current IBO Max : 30 A
Package / Case : TO-225
Rated Repetitive Off-State Voltage VDRM : 200 V


Specifications

	SYMBOL	2N6071 2N6071A 2N6071B	2N6075 2N6075A 2N6075B	2N6073 2N6073A 2N6073B	UNITS
Peak Repetitive Off-State Voltage	VDRM, VRRM	200	400	600	v
RMS On-State Current (TC=85)	IT(RMS)		4.0		A
Peak One Cycle Surge (60Hz, TJ=110)	ITSM		30		A
I2t Value for Fusing (t=8.3ms)	I2t		3.7		A2s
Peak Gate Power (TC=85)	PGM		10		W
Average Gate Power (t=8.3ms, TC=85)	PG(AV)		0.5		W
Peak Gate Voltage (TC=85)	VGM		5.0		V
Storage Temperature	Tstg		-40 to +150
Junction Temperature	TJ		-40 to +110
Thermal Resistance	JC		3.5		/W
Thermal Resistance	JA		75		/W
Maximum Lead Temperature	TL		260

Description

The CENTRAL SEMICONDUCTOR 2N6071A, B series types are silicon sensitive gate triacs designed for such applications as light dimmers, motor controls, heating controls and power  supplies.