2N6058

The 2N6058 has two features.(1) Monolithic construction with bult-in base-emitter shunt resistors.(2) High DC current Gain-hFE = 3500(typ)@ IC=5.0A.

The 2N6058 has some maximum ratings.(1) The characteristic is collector-emitter voltage,the symbol is VCEO,the rating is 80,the unit is V.(2) The characteristic is collector-base voltage,the symbol is VCBO,the rating is 80,the unit is V.(3) The characteristic is emitter-base voltage,the symbol is VEBO,the rating is 5,the unit is V.(4) The characteristic is collector current-continuous,the symbol is Ic,the rating is 12,the unit is A.(5) The characteristic is collector current-peak,the symbol is Ic,the rating is 20,the unit is A.(6) The characteristic is base current,the symbol is IB,the rating is 0.2,the unit is A.(7) The characteristic is total power dissipation @ Tc = 25 derated above 25,the symbol is PD,the rating is 150,the unit is W.(8) The characteristic is total power dissipation @ Tc = 25 derated above 25,the symbol is PD,the rating is 0.857,the unit is W/.(9) The characteristic is operating and storage junction temperature range,the symbol is TJ,TSTG,the rating is -65 to +120,the unit is .

The 2N6058 has some thermal characteristics.The characteristic is thermal resistance junction to case,the symbol is Rjc,the Max is 1.17,the unit is /W.