2N6052

Maximum Collector Cut-off Current :
Transistor Polarity : PNP
Mounting Style : Through Hole
Configuration : Single
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 100 V
Maximum Operating Temperature : + 150 C
Maximum DC Collector Current : 12 A
Package / Case : TO-3
Power Dissipation : 150 W
Packaging : Sleeve


Specifications

Ratings	Symbol	2N6051	2N6052	Unit
Collector-Emitter Voltage	VCEO	80	100	Vdc
Collector-Base Voltage	VCBO	80	100	Vdc
Emitter-Base Voltage	VEBO	5.0		Vdc
Base Current	IB	0.2		Adc
Collector Current	IC	12		Adc
Total Power Dissipation(1) @ TC = +25 @ TC = +100	PT	150 75		W W
Operating & Storage Junction Temperature Range	Top, Tstg	-55 to +175

1) Derate linearly at 1.0 W/above TC > +25





Parameters:

Technical/Catalog Information	2N6052
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP - Darlington
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	12A
Power - Max	150W
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 6A, 3V
Vce Saturation (Max) @ Ib, Ic	2V @ 24mA, 6A
Frequency - Transition	-
Current - Collector Cutoff (Max)	1mA
Mounting Type	Chassis Mount
Package / Case	TO-204, TO-3
Packaging	Tray
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N6052 2N6052 2N6052OS ND 2N6052OSND 2N6052OS