2N6035

Maximum Collector Cut-off Current : 500 uA
Transistor Polarity : PNP
Mounting Style : Through Hole
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 4 A
Power Dissipation : 40 W
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 60 V
Collector- Base Voltage VCBO : 60 V
Package / Case : TO-126
Packaging : Box


Features:

·ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V
·Epoxy Meets UL 94 V−0 @ 0.125 in
·Pb−Free Packages are Available*

Specifications

Rating	Symbol	Value	Unit
Collector−Emitter Voltage 2N6034 2N6035, 2N6038 2N6036, 2N6039	VCEO	40 60 80	Vdc
Collector−Base Voltage 2N6034 2N6035, 2N6038 2N6036, 2N6039	VCBO	40 60 80	Vdc
Emitter−Base Voltage	VEBO	5.0	Vdc
Collector Current Continuous Peak	IC	4.0 8.0	Adc Apk
Base Current	IB	100	mAdc
Total Device Dissipation @ TC = 25 Derate above 25	PD	40 320	W mW/
Total Device Dissipation @ TC = 25 Derate above 25	PD	1.5 12	W mW/
Operating and Storage Junction Temperature Range	TJ, Tstg	65 to +150

Description

Plastic Darlington complementary silicon power transistors 2N6035 are designed for general purpose amplifier and low−speed switching applications.