2N5986

      The 2N5986 is designed as high power plastic complementary PNP silicon power tramsistors which for use in general purpose amplifier and switching citcuits.
      Some absolute maximum ratings of 2N5986 have been concluded into several points as follow.The first one is about its collector to base voltage which would be 60Vdc.The second one is about its collector to emitter voltage which would be 40Vdc.The third one is about its emitter to base voltage which would be 5.0Vdc.The next one is about its collector current which would be 12A for continuous and would be 20A for peak.The next one is about its base current which would be 4.0A.The next one is about its total power dissipation @ Tc=25°C which would be 100W.The next one is about its operating and storage junction which would be from -65 to +150°C.Also its thermal resistance, junction to case which would be max 1.25°C/W.
      Also there are some electrical characteristics of 2N5986 have been concluded into several points as follow.The first one is about its collector cutoff current which would be max 2.0mA.The second one is about its collector cutoff current which would be max 200mA and would be 2.0mA for Tc=125°C.The next one is about its collector to emitter saturation voltage which would be max 0.6Vdc with condition of Ic=6.0A, Ib=0.6A and would be max 1.7Vdc with condition of Ic=12A, Ib=1.8A.The next one is about its DC current gain which would be min 40 with condition of Ic=1.5A, Vce=2.0Vdc and would be min 20 and max 120 with condition of Ic=6.0A, Vce=2.0Vdc and would be min 7.0 with condition of Ic=12A, Vce=2.0Vdc.The next one is about its base to emitter saturation voltage which would be 2.5Vdc with condition of Ic=12.0A, Ib=1.8A.The next one is about its base to emitter on voltage which would be max 1.4Vdc with condition of Ic=6.0A, Vce=2.0Vdc.The next one is about its current gain -bandwidth product which would be min 2.0MHz with condition of Ic=0.5A, Vce=10Vdc and ftest =1.0 MHz.And so on.For more information please contact us.