Transistors Bipolar (BJT) NPN Transistor General Purpose
2N5962_D26Z: Transistors Bipolar (BJT) NPN Transistor General Purpose
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 45 V | ||
Emitter- Base Voltage VEBO : | 8 V | Maximum DC Collector Current : | 0.1 A | ||
DC Collector/Base Gain hfe Min : | 450 at 10 uA at 5 V | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-92 | Packaging : | Reel |
Technical/Catalog Information | 2N5962_D26Z |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 45V |
Current - Collector (Ic) (Max) | 100mA |
Power - Max | 625mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 600 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 200mV @ 500A, 10mA |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-92 |
Packaging | Tape & Reel (TR) |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | 2N5962_D26Z 2N5962_D26Z |