2N5946

The 2N5946 is a 12.5V epitaxial silicon NPN planar transistor.Features of the 2N5946 are:(1)class C transistor;(2)frequency is 470MHz;(3)voltage is 12.5V;(4)power out is 10.0W;(5)power gain is 6.0dB;(6)collector efficiency is 60%;(7)common emitter.

The absolute maximum ratings of the 2N5946 can be summarized as:(1):the symbol is VCBO,the parameter is collector-base voltage,the value is 36.0,the unit is V;(2):the symbol is VCEO,the parameter is collector-emitter voltage,the value is 16.0,the unit is V;(3):the symbol is VEBO,the parameter is emitter-base voltage,the value is 4.0,the unit is V;(4):the symbol is VCES,the parameter is collector-emitter voltage,the value is 36.0,the unit is V;(5):the symbol is IC,the parameter is collector current(max.),the value is 2.0,the unit is A;(6):the symbol is PTOT,the parameter is total device dissipation at +25,the value is 37.5,the unit is W;(7):the symbol is TSTG,the parameter is storage temperature,the value is -65 to +150,the unit is ;(8):the symbol is TJ,the parameter is junction temperature,the value is +200,the unit is .

The electrical characteristics of the 2N5946 can be summarized as:(1):the symbol is BVCEO,the test conditions is IC=200mA,IB=0,the value is 16,the unit is V;(2):the symbol is BVEBO,the test conditions is IE=4mA,IC=0,the value is 4,the unit is V;(3):the symbol is BVCES,the test conditions is IC=200mA,VBE=0,the value is 36,the unit is V;(4):the symbol is ICBO,the test conditions is VCB=15V,IC=0.1A,the value is 2,the unit is mA;(5):the symbol is hFE,the test conditions is VCE=5V,IC=0.5A,the typ is 20.