Transistors Bipolar (BJT) 25A 60V 200W NPN
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 60 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 25 A |
DC Collector/Base Gain hfe Min : | 35 | Configuration : | Single |
Maximum Operating Frequency : | 4 MHz (Min) | Maximum Operating Temperature : | + 200 C |
Mounting Style : | Through Hole | Package / Case : | TO-204 |
Packaging : | Tray |
Rating | Symbol | 2N5883 2N5885 |
2N5884 2N5886 |
Unit |
CollectorEmitter Voltage | VCEO | 60 | 80 | Vdc |
CollectorBase Voltage | VCB | 60 | 80 | Vdc |
EmitterBase Voltage | VEB | 5.0 | 5.0 | Vdc |
Collector Current - Continuous Peak |
IC | 25 50 |
25 50 |
Adc |
Base Current | IB | 7.5 | 7.5 | Adc |
Total Device Dissipation @ TC = 25 Derate above 25 |
PD | 200 1.15 |
200 1.15 |
Watts W/ |
Operating and Storage Junction Temperature Range |
TJ, Tstg | 65 to +200 | 65 to +200 |
Technical/Catalog Information | 2N5885 |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Current - Collector (Ic) (Max) | 25A |
Power - Max | 200W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 10A, 4V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 1.5A, 15A |
Frequency - Transition | 4MHz |
Current - Collector Cutoff (Max) | 2mA |
Mounting Type | Chassis Mount |
Package / Case | TO-204, TO-3 |
Packaging | Tray |
Drawing Number | * |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | 2N5885 2N5885 2N5885OS ND 2N5885OSND 2N5885OS |