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Application·For general-purpose power amplifier and switching applicationsSpecifications SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage 2N5879 Open emitter -60 V 2N5880 -80 VCEO Collector-emitter voltage 2N5879 Open base ...

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2N5879: Application·For general-purpose power amplifier and switching applicationsSpecifications SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage 2N5879 Open...

2N5879 Data Sheet

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Part Number:: 2N5879
Supply Ability:: 5000

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Upload time: 2024/6/7

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Transistors Bipolar (BJT) 25A 60V 200W NPN

Product Details

Description

Application

·For general-purpose power amplifier and switching applications

Specifications

SYMBOL	PARAMETER		CONDITIONS	VALUE	UNIT
V_CBO	Collector-base voltage	2N5879	Open emitter	-60	V
V_CBO	Collector-base voltage	2N5880	Open emitter	-80	V
V_CEO	Collector-emitter voltage	2N5879	Open base	-60	V
V_CEO	Collector-emitter voltage	2N5880	Open base	-80	V
V_EBO	Emitter-base voltage		Open collector	-5	V
I_C	Collector current			-15	A
I_CM	Collector current-peak			-30	A
I_B	Base current			-5	A
P_D	Total power dissipation		T_C=25	160	W
T_j	Junction temperature			150
T_stg	Storage temperature			-65~200

Description

·With TO-3 package
·Low collector saturation voltage
·Complement to type 2N5881 2N5882

2N5879

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2N5879

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