Transistors Bipolar (BJT) NPN RF Transistor
2N5770_D27Z: Transistors Bipolar (BJT) NPN RF Transistor
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 15 V | ||
Emitter- Base Voltage VEBO : | 4.5 V | Maximum DC Collector Current : | 0.05 A | ||
DC Collector/Base Gain hfe Min : | 20 at 3 mA at 1 V | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-92-3 Kinked Lead | Packaging : | Reel |
Technical/Catalog Information | 2N5770_D27Z |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Frequency - Transition | - |
Noise Figure (dB Typ @ f) | 6dB @ 60MHz |
Current - Collector (Ic) (Max) | 50mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 8mA, 10V |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 15V |
Gain | 15dB |
Power - Max | 250mW |
Compression Point (P1dB) | - |
Package / Case | TO-92 |
Packaging | Bulk |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | 2N5770_D27Z 2N5770_D27Z |