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2N5770_D26Z

Transistors Bipolar (BJT) NPN RF Transistor

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SeekIC No. : 00211841 Detail

2N5770_D26Z: Transistors Bipolar (BJT) NPN RF Transistor

2N5770_D26Z Data Sheet

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Part Number:
2N5770_D26Z
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 15 V
Emitter- Base Voltage VEBO : 4.5 V Maximum DC Collector Current : 0.05 A
DC Collector/Base Gain hfe Min : 20 at 3 mA at 1 V Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-92-3 Kinked Lead Packaging : Reel    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Packaging : Reel
Mounting Style : Through Hole
Package / Case : TO-92-3 Kinked Lead
Maximum DC Collector Current : 0.05 A
Collector- Emitter Voltage VCEO Max : 15 V
Emitter- Base Voltage VEBO : 4.5 V
DC Collector/Base Gain hfe Min : 20 at 3 mA at 1 V


Parameters:

Technical/Catalog Information2N5770_D26Z
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Frequency - Transition-
Noise Figure (dB Typ @ f)6dB @ 60MHz
Current - Collector (Ic) (Max)50mA
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 8mA, 10V
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)15V
Gain15dB
Power - Max350mW
Compression Point (P1dB)-
Package / CaseTO-92
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2N5770_D26Z
2N5770_D26Z



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