2N5686

Transistor Polarity : NPN
Configuration : Single
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Temperature : + 200 C
Package / Case : TO-204
Packaging : Tray
Collector- Emitter Voltage VCEO Max : 80 V
DC Collector/Base Gain hfe Min : 15
Maximum Operating Frequency : 2 MHz (Min)
Maximum DC Collector Current : 50 A


Specifications

Rating	Symbol	2N5685	2N5684	2N5686	Unit
CollectorEmitter Voltage	VCEO	60	80	80	Vdc
CollectorBase Voltage	VCB	60	80	80	Vdc
EmitterBase Voltage	VEB	5.0	5.0	5.0	Vdc
Collector Current - Continuous	IC	50	50	50	Adc
Base Current	IB	15	15	15	Adc
Total Device Dissipation @ TC = 25 Derate above 25	PD	300 1.715	300 1.715	300 1.715	Watts W/
Operating and Storage Junction Temperature Range	TJ, Tstg	65 to +200		65 to +150

Description

This is the description about 2N5686 of the NPN POWER SILICON TRANSISTOR, Qualified per MIL-PRF-19500/464.
The absolute Maximum Ratings are these (TC = 250°C unless otherwise noted).Collector-Emitter Voltage VCEO is 80 Vdc. Collector-Base Voltage VCBO is 80 Vdc. Emitter-Base Voltage VEBO is 5.0 Vdc. Base Current IB is 15 Adc. Collector Current IC is 50 Adc. Total Power Dissipation (@ TC = +250°C) is 300W and (@ TC = +1000°C PT) is 171W. Operating Junction Temperature Range is from -55 to +200 °C.Storage Junction Temperature Range is from -55 to +200 °C.
These are the Electrical Characteristics (Ta = 25°C).Collector Emitter Breakdown Voltage (IC = 100 mAdc) is 80 Vdc. Collector-Emitter Cutoff Current (VCE = 40 Vdc 2N5686 ICEO) is 500 mAdc. Collector-Emitter Cutoff Current (VCE = 80 Vdc, VBE = 1.5 Vdc 2N5686 ICEX) is 500 mAdc. Collector-Base Cutoff Current (VCB = 80 Vdc 2N5686 ICBO) is 2.0 mAdc. Emitter-Base Cutoff Current (VEB = 5.0 Vdc IEBO) is 1.0 mAdc. Forward-Current Transfer Ratio (IC = 5.0 Adc, VCE = 2.0 Vdc) is from 30 to 60Vdc and (IC = 25 Adc, VCE = 2.0 Vdc) is from 15 to 60Vdc and (IC = 50 Adc, VCE = 5.0 Vdc) is from 5.0 to 60Vdc. Collector-Emitter Saturation Voltage (IC = 25 Adc, IB = 2.5 Adc) is 1.0 Vdc and (IC = 50 Adc, IB = 10 Adc) is 5.0Vdc. Base-Emitter Saturation Voltage (IC = 25 Adc, IB = 2.5 Adc VBE(sat)) is 2.0 Vdc. Base-Emitter Voltage (IC = 25 Adc, VCE = 2.0 Vdc VBE(on)) is 2.0 Vdc.
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Parameters:

Technical/Catalog Information	2N5686
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	50A
Power - Max	300mW
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 25A, 2V
Vce Saturation (Max) @ Ib, Ic	1V @ 2.5A, 25A
Frequency - Transition	2MHz
Current - Collector Cutoff (Max)	1mA
Mounting Type	Chassis Mount
Package / Case	TO-204, TO-3
Packaging	Tray
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N5686 2N5686 2N5686OS ND 2N5686OSND 2N5686OS